Cercetări privind aplicarea unor straturi subțiri de compuși semiconductori AII BVI în celulele solare pe bază de perovskite [Articol]

Popa, Mihail

Главная
→
FACULTATEA DE ŞTIINŢE REALE, ECONOMICE ŞI ALE MEDIULUI
→
Articole
→
Просмотр элемента

dc.contributor.author	Popa, Mihail	ro
dc.date.accessioned	2019-08-21T06:05:05Z
dc.date.available	2019-08-21T06:05:05Z
dc.date.issued	2019
dc.identifier.citation	Popa, Mihail. Cercetări privind aplicarea unor straturi subțiri de compuși semiconductori AII BVI în celulele solare pe bază de perovskite / M. Popa // Tradiţie şi inovare în cercetarea ştiinţifică, Ediţia a 8-a: Materialele Colloquia Professorum din 12 oct. 2018. – Bălţi : US „Alecu Russo”, 2019. – P. 137-143. – ISBN 978-9975-50-235.	ro
dc.identifier.uri	http://dspace.usarb.md:8080/jspui/handle/123456789/4347
dc.description.abstract	In the work were presented preparation and research techniques of the electrical properties of the perovskite solar cells, in which ZnS, ZnSe and ZnTe thin films were applied. Using these layers as the electron transport layer (ETL), a power conversion efficiency (PCE) of about 2.57% was obtained, and cells with hole transport layer (HTL) the PCE achieved a maximum 2.14%. By doping ETL and HTL with chalcogenides a maximum yield of 3.98% was obtained. Preparation of solar cells with two layers of ETL or HTL increased of PCE to 7.40% maximum. By doping bulk heterojunction of perovskite with the calcogenide thin layers has increased PCE of cells up to 13.84%.	en
dc.language.iso	ro	ro
dc.publisher	USARB	ro
dc.rights	Attribution-NonCommercial-NoDerivatives 4.0 International	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/	*
dc.subject	perovskite	en
dc.subject	ETL	en
dc.subject	HTL	en
dc.subject	ITO	en
dc.subject	PEDOT-PSS	en
dc.subject	PCBM	en
dc.subject	PCE	en
dc.title	Cercetări privind aplicarea unor straturi subțiri de compuși semiconductori AII BVI în celulele solare pe bază de perovskite [Articol]	ro
dc.type	Article	en