Conductivitatea electrică de tip Mott în straturile subţiri policristaline de ZnSxSe1-x [Articol]

Abstract

The temperature dependence of the electrical conductivity of ZnSxSe1-x thin layers was studied during a heat treatment consisting of a series of successive heating and cooling in the temperature range 300 - 500K. Measurements have shown that the thermal activation energy of the low temperatures (ΔE1 = 0.13 – 0.43 eV) is much smaller than the thermal activation energy in temperature (ΔE2 = 0.43 – 1.89 eV). In both fields of measurements the thermal activation energy increases with increasing of sulfur content of the thin layers. It has been found that at low temperatures in respective layers the dominant mechanism of electrical conduction is Mott type conduction.