Аннотации:
ZnSxSe1-x thin films were prepared from evaporated technique on the glass substrates using powders of ZnS and ZnSe. Structure analysis of the thin films had been perfected from XRD technique, morphology of surface had been obtained from SEM and the composition of the thin films was carried out by using EDAX techniques. Diffraction patents determined that ZnSxSe1-x thin layers have a cubic structure of zinc blended type, with a strong orientation of the crystallite after the crystalline plane (111). The lattice parameter of the ZnSxSe1-x thin films ranges from the value a = 5,63246Å ( for x = 0) up to a = 5,41607Å (x = 1), and the crystallite size determined by X-ray diffraction patterns are comprised between 13.526 Å and 5,304Å. Images EDAX confirm predetermined composition of components.